The four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lies in the third orbit so loosely bounded valency electron in Si as compared to C.
C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is…
NEET UG 2012 — Physics Modern Physics
2012mcqeasy
C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because
Official previous-year question
Held on 30 Apr 2012 · Verified 9 Jul 2026.
Options
- A
in case of C, the valence band is not completely filled at absolute zero temperature
- B
in case of C, the conduction band is partly filled even at absolute zero temperature
- C
the four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third
- D
the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit
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