The four bonding electrons in the case of C lie in the second orbit, whereas in case of Si they lies in the third orbit so loosely bounded valency electron in Si as compared to C.
NEET UG 2012 — Physics Modern Physics
C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because
Held on 30 Apr 2012 · Verified 9 Jul 2026.
in case of C, the valence band is not completely filled at absolute zero temperature
in case of C, the conduction band is partly filled even at absolute zero temperature
the four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third
the four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit
Sign in to track your attempts and accuracy.
Sign in to keep a private note on this question. Nothing you write is ever public.
A particle of mass $m$ is moving around the origin with a constant force $F$ pulling it towards the origin. If Bohr model is used to describe its motion, the radius $r$ of the $n^{\text {th }}$ orbit and the particle's speed $v$ in the orbit depend on $n$ as
A full wave rectifier circuit with diodes $\left(D_1\right)$ and $\left(D_2\right)$ is shown in the figure. If input supply voltage $V_{\text {in }}=220 \sin (100 \pi t)$ volt, then at $t=15 \mathrm{msec}$ 
The maximum kinetic energy of photoelectrons from a surface with work function φ = 2 eV when light of λ = 4000 Å falls on it is (hc = 12400 eV·Å):
A photon and an electron (mass $m$ ) have the same energy $E$. The ratio ( $\lambda_{\text {photon }} / \lambda_{\text {electron }}$ ) of their de Broglie wavelengths is: (c is the speed of light)
The output $(\mathrm{Y})$ of the given logic implementation is similar to the output of an/a _____ gate. 
Work through every NEET UG Modern Physics PYQ, year by year.