ni2=nenhne=nh(ni)2ne=(4.5×1022)(1.5×1016)2ne=5×109 m−3 So, nf1≫ne semiconductor is p-type.
Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5×1016 m−3. Doping by indium increases nh to 4.5×1022 m−3. The doped semiconductor is of
Held on 30 Apr 2011 · Verified 9 Jul 2026.
n-type with electron concentration ne=5×1022 m−3
p-type with electron concentration ne=2.5×1010 m−3
n-type with electron concentration ne=2.5×1023 m−3
p-type having electron concentration ne=5×109 m−3
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