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Pure Si at 500 ~K has equal number of electron (n_e ) and hole (n_h ) concentrations of 1.5 × 10^16 ~m^-3. Doping by indium increases n_h to 4.5 ×…

NEET UG 2011 — Physics Modern Physics

2011mcqeasy

Pure Si at 500 K500 \mathrm{~K}500 K has equal number of electron (ne)\left(n_e\right)(ne​) and hole (nh)\left(n_h\right)(nh​) concentrations of 1.5×1016 m−31.5 \times 10^{16} \mathrm{~m}^{-3}1.5×1016 m−3. Doping by indium increases nhn_hnh​ to 4.5×1022 m−34.5 \times 10^{22} \mathrm{~m}^{-3}4.5×1022 m−3. The doped semiconductor is of

Official previous-year question

Held on 30 Apr 2011 · Verified 9 Jul 2026.

Options

  1. A

    nnn-type with electron concentration ne=5×1022 m−3n_e=5 \times 10^{22} \mathrm{~m}^{-3}ne​=5×1022 m−3

  2. B

    ppp-type with electron concentration ne=2.5×1010 m−3n_e=2.5 \times 10^{10} \mathrm{~m}^{-3}ne​=2.5×1010 m−3

  3. C

    n-type with electron concentration ne=2.5×1023 m−3n_e=2.5 \times 10^{23} \mathrm{~m}^{-3}ne​=2.5×1023 m−3

  4. D

    p-type having electron concentration ne=5×109 m−3n_e=5 \times 10^9 \mathrm{~m}^{-3}ne​=5×109 m−3

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